 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Semiconductor SUF622EF N-Ch/P-Ch Enhancement-Mode MOSFET Description * High speed switching application. * Analog switch application. Features * STK1828 Chip and STJ828 Chip in SOT-563F Package * Low threshold voltage * High speed. Ordering Information Type NO. SUF622EF Marking HX Package Code SOT-563F Outline Dimensions unit : mm 3 2 1 Q2 Q1 4 5 6 PIN Connections 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain1 KST-J018-000 1 SUF622EF Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Drain Power dissipation Channel temperature Storage temperature range (Ta=25C) Symbol VDS VGSS ID PD Tch Tstg Ratings 20 10 50 100 150 -55~150 -20 -7 -50 Unit V V mA mW C C Electrical Characteristics (Q1:N-CH) Characteristic Drian-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time (Ta=25C) Symbol BVDSS Vth IDSS IGSS RDS(ON) Yfs Ciss Coss Crss ton toff Test Condition ID=100A, VGS=0 ID=0.1mA, VDS=3V VDS=20V, VGS=0 VGS=10V, VDS=0 VGS=2.5V, ID=10mA VDS=3V, ID=10mA VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDD=3V, ID=10mA VGEN=0~2.5V VDD=3V, ID=10mA VGEN=0~2.5V Min. Typ. Max. 20 0.5 1.5 1 1 20 20 5.5 6.5 1.6 0.14 0.14 40 Unit V V A A mS pF pF pF Electrical Characteristics (Q2:P-CH) Characteristic Drian-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time (Ta=25C) Symbol BVDSS Vth IDSS IGSS RDS(ON) Yfs Ciss Coss Crss ton toff Test Condition ID=-100A, VGS=0 ID=-0.1mA, VDS=-3V VDS=-20V, VGS=0 VGS=-7V, VDS=0 VGS=-2.5V, ID=-10mA VDS=-3V, ID=-10mA VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDS=-3V, VGS=0, f=1MHz VDD=-3V, ID=-10mA VGEN=0~-2.5V VDD=-3V, ID=-10mA VGEN=0~-2.5V Min. Typ. Max. -20 -0.5 -1.5 -1 -1 20 15 10.4 8.4 2.8 0.15 0.13 40 Unit V V A A mS pF pF pF KST-J018-000 2 SUF622EF Electrical Characteristic Curves (Q1:N-CH) Fig.1 ID - VDS Fig.2 ID - VDS Fig.3 IDR - VDS Fig.4 ID - VGS 155 - Fig.5 Yfs- ID Fig.6 C - VDS KST-J018-000 3 Electrical Characteristic Curves Fig.7 VDS - ID Fig.8 t - ID SUF622EF Electrical Characteristic Curves (Q2 : P-CH) Fig1 ID - VDS Fig2 ID - VDS Fig3 IDR - VDS Fig4 ID - VGS 100 - KST-J018-000 4 SUF622EF Fig5 Yfs- ID Fig6 C - VDS Fig7 VDS(on) - ID Fig8 t - ID - KST-J018-000 5 |
Price & Availability of SUF622EF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |